MCO150-16IO1 single thyristor thyristor 3 1/4 2 part number MCO150-16IO1 backside: isolated tav t vv 1.37 rrm 158 1600 = v= v i= a features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 ixys reserves the right to change limits, conditions and dimensions. 20140123a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
MCO150-16IO1 v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i v i a v t 1.37 r 0.2 k/w min. 158 v v 100 t = 25c vj t = c vj ma 10 v = v t = 25c vj i = a t v t = c c 80 p tot 620 w t = 25c c 150 1600 forward voltage drop total power dissipation conditions unit 1.78 t = 25c vj 125 v t0 v 0.84 t = c vj 150 r t 3.5 m ? v 1.37 t = c vj i = a t v 150 1.89 i = a 300 i = a 300 threshold voltage slope resistance for power loss calculation only a 125 v v 1600 t = 25c vj i a 250 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0.5 average gate power dissipation c j 119 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 2.00 2.16 14.5 14.0 ka ka ka ka 1.70 1.84 20.0 19.4 1600 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 150c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t=150c critical rate of rise of voltage a/s 500 v/s t = s; ia;v = ? v r = ; method 1 (linear voltage rise) vj d vj 450 a t p g =0.45 di /dt a/s; g =0.45 d drm cr v = ? v d drm gk 1000 1.4 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 150 ma t= c -40 vj 1.6 v 200 ma v gd gate non-trigger voltage t= c vj 0.2 v i gd gate non-trigger current 10 ma v = ? v d drm 150 latching current t= c vj 450 ma i l 25 ts p =10 ia; g = 0.45 di /dt a/s g =0.45 holding current t= c vj 200 ma i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2s t gd 25 ia; g = 0.45 di /dt a/s g =0.45 v = ? v d drm turn-off time t= c vj 150 s t q di/dt = a/s; 10 dv/dt = v/s; 15 v = r 100 v; i a; t = 150 v = ? v d drm t s p = 200 non-repet., i = 150 a t 150 r thch thermal resistance case to heatsink k/w thyristor 1700 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage r/d reverse current, drain current t t r/d r/d 200 0.10 ixys reserves the right to change limits, conditions and dimensions. 20140123a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
MCO150-16IO1 1) i rms is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). in case of (1) and a pr oduct with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. ratings abcd zyyww xxxxx product marking logo part no. datecode assembly code assembly line ? package t op c m d nm 1.5 mounting torque 1.1 t vj c 150 virtual junction temperature -40 weight g 30 symbol definition typ. max. min. conditions operation temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 150 a per terminal 125 -40 terminal to terminal sot-227b ( minibloc ) delivery mode quantity code no. part number marking on product ordering 1 ) 50/60 hz, rms; i 1 ma isol MCO150-16IO1 498629 tube 10 MCO150-16IO1 standard 3000 isol t stg c 150 storage temperature -40 2500 threshold voltage v 0.84 m ? v 0 max r 0 max slope resistance * 1.6 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 150 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20140123a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
MCO150-16IO1 3 1/4 2 outlines sot-227b (minibloc) ixys reserves the right to change limits, conditions and dimensions. 20140123a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
MCO150-16IO1 0.01 0.1 1 600 800 1000 1200 1400 1600 1800 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300 10 0 10 1 10 2 10 3 10 4 0.00 0.05 0.10 0.15 0.20 i tsm [a] i t [a] v t [v] t[ms] z thjc [k/w] 234567890 1 1 0 5000 10000 15000 20000 25000 i 2 t [a 2 s] t[ms] i t(av)m [a] t c [c] 0255075100125150 0 50 100 150 200 250 300 fig. 1 forward characteristics fig. 3 i 2 t versus time (1-10 ms) t[s] fig. 6 max. forward current at case temperature fig. 2 surge overload current fig. 8 transient thermal impedance t vj = 25c t vj = 125c t vj =45c 50 hz, 80% v rrm t vj =125c t vj = 45c v r =0 v 125c 150c 0 40 80 120 160 200 0 50 100 150 200 250 300 350 i f(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fi g . 7b and ambient tem p erature 050100150 t amb [c] dc = 1 0.5 0.4 0.33 0.17 0.08 10 100 1000 1 10 100 1000 1 10 100 1000 10000 0.1 1 10 i g [ma] v g [v] t gd [ s] i g [ma] typ. limit t vj =125c fig. 4 gate trigger characteristics fig. 5 gate controlled delay time dc = 1 0.5 0.4 0.33 0.17 0.08 6 4 5 2 1 3 4: p gav =0.5w 5: p gm =5w 6: p gm =10w 1: i gd ,t vj =125c 2: i gt ,t vj =25c 3: i gt ,t vj =-40c i gd ,t vj =125c r thha 0.1 0.2 0.4 0.6 0.8 1.0 r thi [k/w] t i [s] 0.020 0.030 0.023 0.003 0.032 0.050 0.043 0.250 0.082 0.170 thyristor ixys reserves the right to change limits, conditions and dimensions. 20140123a data according to iec 60747and per semiconductor unless otherwise specified ? 2014 ixys all rights reserved
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